FQP9N08 Datasheet, MOSFET, Fairchild Semiconductor

Download (Size : 536.60KB)

FQP9N08 Features and benefits

*
*
*
*
*
*
* 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 13 pF) Fast switching 100% avalanche.

FQP9N08 Application

such as automotive, high efficiency switching for DC/DC converters, and DC motor control. TM Features
*
*
.

FQP9N08 Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching pe.

Image gallery